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Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs

Lookup NU author(s): Dr Piotr Dobrosz, Dr Sarah Olsen, Professor Anthony O'Neill

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Abstract

We report for the first time the optimization of the channel lateral strain profile as a new technological booster for improved performance of multi-gate n-channel MOSFET. We find that quasi-uniform or flat-Gaussian-close-to-the-drain profiles are optimum for the Ion boosting of sub-50nm scaled MOSFETs, while the penalty on Ioff and subthreshold slope is minimum. The reported predictions use realistic lateral uniaxial strain profiles, with peaks up to few GPa's and average values of hundreds of MPa's. ©2009 IEEE.


Publication metadata

Author(s): De Michielis L, Moselund K, Bouvet D, Dobrosz P, Olsen S, O'Neill A, Lattanzio L, Najmzadeh M, Selmi L, Ionescu A

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Year of Conference: 2009

Pages: 119-120

ISSN: 1930-885X

Publisher: IEEE

URL: http://dx.doi.org/10.1109/VTSA.2009.5159319

DOI: 10.1109/VTSA.2009.5159319

Library holdings: Search Newcastle University Library for this item

ISBN: 9781424427857


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