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Tin-vacancy complex in germanium

Lookup NU author(s): Dr Jose Coutinho, Dr Alexandra Carvalho, Dr Mark Rayson, Professor Patrick Briddon

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Abstract

Electrically active defects introduced into Ge crystals co-doped with tin and phosphorus atoms by irradiation with 6 MeV electrons have been studied by means of transient capacitance techniques and ab-initio density functional modeling. It is shown that Sn atoms are effective traps for vacancies (V) in the irradiated Ge:Sn+P crystals. The electronic structure of Sn-V is unraveled on the basis of hybrid states from a Sn atom and a divacancy. Unlike the case for Si, Sn-V in Ge is not a donor. A hole trap with 0.19 eV activation energy for hole emission to the valence band is assigned to an acceptor level of the Sn-V complex. The Sn-V complex anneals out upon heat-treatments in the temperature range 50-100 degrees C. Its disappearance is accompanied by the formation of phosphorus-vacancy centers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3574405]


Publication metadata

Author(s): Markevich VP, Peaker AR, Hamilton B, Litvinov VV, Pokotilo YM, Lastovskii SB, Coutinho J, Carvalho A, Rayson MJ, Briddon PR

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2011

Volume: 109

Issue: 8

Print publication date: 19/04/2011

ISSN (print): 0021-8979

ISSN (electronic): 1089-7550

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.3574405

DOI: 10.1063/1.3574405


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