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Study of the Interface Properties of TiO2/SiO2/SiC by Photocapacitance

Lookup NU author(s): Dr Rajat Mahapatra, Benjamin Furnival, Professor Nick Wright, Dr Alton Horsfall

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Abstract

We have investigated the annealing of fixed oxide charge and interfacial traps in MISiC strucures by means of the photo capacitance voltage technique at temperatures up to 500 degrees C. Elevated temperature measurements show reduced hysteresis and reduced fixed oxide charge at the interface. The photo capacitance technique shows a real-time measurement at elevated temperatures, in which electrons are populated by photo energy, in a 4H-SiC MIS structure. We also confirm the reduction of fixed oxide charge at the interface by means of high temperature post deposition annealing, which occurs during the high temperature measurements.


Publication metadata

Author(s): Weng MN, Barker S, Mahapatra R, Furnival BJD, Wright NG, Horsfall AB

Editor(s): Monakhov, E.V., Hornos, T., Svensson, B.G.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials

Year of Conference: 2011

Pages: 350-353

ISSN: 0255-5476 (print) 1422-6375 (online)

Publisher: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.350

DOI: 10.4028/www.scientific.net/MSF.679-680.350

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