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Influence of intercalated silicon on the transport properties of graphene

Lookup NU author(s): Dr Jon Goss, Professor Patrick Briddon, Dr Venkata Nagareddy, Professor Nick Wright, Dr Alton Horsfall

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Abstract

Epitaxial graphene produced from SiC substrates exhibits a carrier mobility reduction thought to arise from intercalated silicon. We present the results of density functional simulations and show that individual silicon atoms are highly mobile on and between graphene sheets, suggesting that thermally stable structures involving individual Si impurities are likely to result from the interaction of silicon with defects in the graphene sheets.


Publication metadata

Author(s): Goss JP, Briddon PR, Nagareddy VK, Wright NG, Horsfall AB, Caldwell JD, Gaskill DK, Jernigan GG

Editor(s): Monakhov, E.V., Hornos, T., Svensson, B.G.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials

Year of Conference: 2011

Pages: 793-796

ISSN: 0255-5476 (print) 1422-6375 (online)

Publisher: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.793

DOI: 10.4028/www.scientific.net/MSF.679-680.793

Library holdings: Search Newcastle University Library for this item

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