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M-PRES: a statistical tool for modelling the impact of manufacturing process variations on circuit-level performance parameters

Lookup NU author(s): Santosh Shedabale, Dr Gordon Russell, Professor Alex Yakovlev

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Abstract

The effects of process variations on the performance of nanometre CMOS circuits have become a serious design issue, aggravated by further scaling of device dimensions. This article presents a statistical TCAD tool called Multilevel-Partitioned REsponse Surface Modelling (M-PRES) to model the impact of manufacturing process variations on circuit performance; an SRAM cell is used as a demonstration vehicle for the tool. A new non-Gaussian approach for modelling variations for sub-90 nm technologies is also presented. A comparison is made with the Monte Carlo approach, demonstrating four times (4x) computationally efficiency for M-PRES without the loss of accuracy. The M-PRES models are also re-usable reducing the computation time for the analysis of other sets of process data down to a few tens of seconds.


Publication metadata

Author(s): Shedabale S; Russell G; Yakovlev A

Publication type: Article

Publication status: Published

Journal: IET Circuits, Devices and Systems Series

Year: 2011

Volume: 5

Issue: 5

Pages: 403-410

Print publication date: 01/09/2011

ISSN (print): 1751-858X

ISSN (electronic): 1751-8598

Publisher: The Institution of Engineering and Technology

URL: http://dx.doi.org/10.1049/iet-cds.2010.0110

DOI: 10.1049/iet-cds.2010.0110


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