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Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal-Insulator-Metal Devices

Lookup NU author(s): Dr Rajat Mahapatra, Dr Alton Horsfall, Professor Nick Wright

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Abstract

Resistive switching (RS) characteristics are investigated in fabricated Al-doped HfO2 metal-insulator-metal devices. It is proposed that oxygen vacancies in Al-doped HfO2 devices play a key role as electron trap centers, leading to the forming-free reversible bipolar resistance switching behavior. The conduction mechanism can be explained by electron trapping and detrapping from such oxygen vacancy-related traps in the Al-doped HfO2 films and is dominated by a trap-controlled space-charge-limited current (SCLC) mechanism. A large RS ratio (similar to 10(6)) and excellent retention characteristics are also observed at room temperature as well as at 85A degrees C. Such devices have potential for application in nonvolatile random-access memory.


Publication metadata

Author(s): Mahapatra R, Horsfall AB, Wright NG

Publication type: Article

Publication status: Published

Journal: Journal of Electronic Materials

Year: 2012

Volume: 41

Issue: 4

Pages: 656-659

Print publication date: 01/04/2012

ISSN (print): 0361-5235

ISSN (electronic): 1543-186X

Publisher: Springer New York LLC

URL: http://dx.doi.org/10.1007/s11664-012-1912-1

DOI: 10.1007/s11664-012-1912-1


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