Lookup NU author(s): Benjamin Furnival,
Professor Nick Wright,
Dr Alton Horsfall
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In this paper a Pt/HfO2/SiO2/SiC MIS capacitor is reported, which unlike previously documented Pt/SiO2/SiC and Pd/TiO2/SiO2/SiC devices shows no response to O-2 ambients. As a result, if the capacitor is used within a sensor array it could significantly improve selectivity between H-2 and O-2. The use of SiC as the substrate material also enables this device and the potential array to operate in extreme conditions, where standard electronics fail. Examination of the devices sensing mechanisms reveal that in contrast to previous reports, a positively charged dipole layer is not formed during exposure to O-2. Whilst the passivation of trapping states at the SiO2/SiC interface have little influence on the response to either H-2 or O-2.
Author(s): Furnival BJD, Wright NG, Horsfall AB
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: IEEE Sensors
Year of Conference: 2011
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