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Reconfigurations and diffusion of trivacancy in silicon

Lookup NU author(s): Dr Jose Coutinho, Dr Mark Rayson, Professor Patrick Briddon

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Abstract

Disappearance of the divacancy (V-2) and trivacancy (V-3) complexes upon isochronal and isothermal annealing of electron irradiated Si:O crystals has been studied by means of deep level transient spectroscopy. The annealing studies have shown that the V-2 and V-3 defects are mobile in Si at T > 200 degrees C and in oxygen-rich material are trapped by interstitial oxygen atoms so resulting in the appearance of V2O and V3O defects. The activation energies for diffusion of the V-2 and V-3 centers have been determined. Density functional modeling calculations have been carried out to investigate the migration and reorientation mechanisms of V-3 in large silicon supercells. It is proposed that these comprise a sequence of transformations between V-3(D-3) and V-3(C-2) configurations. (C) 2011 Elsevier B.V. All rights reserved.


Publication metadata

Author(s): Markevich VP, Peaker AR, Hamilton B, Lastovskii SB, Murin LI, Coutinho J, Markevich AV, Rayson MJ, Briddon PR, Svensson BG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 26th International Conference on Defects in Semiconductors (ICDS)

Year of Conference: 2012

Pages: 2974-2977

ISSN: 0921-4526

Publisher: Elsevier BV

URL: http://dx.doi.org/10.1016/j.physb.2011.08.001

DOI: 10.1016/j.physb.2011.08.001

Library holdings: Search Newcastle University Library for this item

Series Title: Physica B: Condensed Matter

ISBN: 18732135


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