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Improving the Robustness of Self-timed SRAM to Variable Vdds

Lookup NU author(s): Abdullah Baz, Dr Delong Shang, Dr Fei Xia, Professor Alex Yakovlev, Dr Alex Bystrov

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Abstract

The most efficient power saying method in digital systems is to scale Vdd, owing to the quadratic dependence of dynamic power consumption. This requires memory working under a wide range of Vdds in terms of performance and power saving requirements. A self-timed 6T SRAM was previously proposed, which adapts to the variable Vdd automatically. However due to leakage, the size of memory is restricted by process variations. This paper reports a new self-timed 10T SRAM cell with bit line keepers developed to improve robustness in order to work in a wide range of Vdds down to 0.3V under PVT variations. In addition, this paper briefly discusses the potential benefits of the self-timed SRAM for designing highly reliable systems and detecting the data retention voltage (DRV).


Publication metadata

Author(s): Baz A, Shang DL, Xia F, Yakovlev A, Bystrov A

Editor(s): Ayala, J.L., Garcia Camara, B., Prieto, M., Ruggiero, M., Sicard, G.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation: 21st International Workshop (PATMOS)

Year of Conference: 2011

Pages: 32-42

ISSN: 0302-9743 (print) 1611-3349 (online)

Publisher: Springer

URL: http://dx.doi.org/10.1007/978-3-642-24154-3_4

DOI: 10.1007/978-3-642-24154-3_4

Library holdings: Search Newcastle University Library for this item

Series Title: Lecture Notes in Computer Science

ISBN: 9783642241536


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