Lookup NU author(s): Lucy Martin,
Professor Nick Wright,
Dr Alton Horsfall
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
The recent development of Silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key enabling step in the realisation of low power circuitry for high-temperature applications, such as aerospace and well logging. This paper describes investigations into the properties of the gate dielectric as part of the development of the technology to realise monolithic fabrication of both n and p channel devices. A comparison of the oxide quality of the silicon carbide CMOS transistors is performed to examine the feasibility of this technology for high-emperature circuitry.
Author(s): Martin LC, Clark D, Ramsay EP, Murphy AE, Thompson RF, Smith DA, Young RAR, Cormack JD, Wright NG, Horsfall AB
Editor(s): Devaty, R.P., Dudley, M., Chow, T.P., Neudeck, P.G.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM)
Year of Conference: 2012
Publisher: Trans Tech Publications Ltd.
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum