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High Temperature Reliability of High-kappa/SiC MIS Hydrogen Sensors

Lookup NU author(s): Benjamin Furnival, Professor Nick Wright, Dr Alton Horsfall

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Abstract

In this work a Pt/HfO2/SiO2/SiC MIS capacitor is exposed in air at 400 degrees C for 1000 hours, with its oxide capacitance, flatband voltage and density of interface traps being measured at various time intervals. After the structure has been shown to operate reliably for extensive periods of time at 400 degrees C, the C-V characteristics of a device from the same fabrication batch are measured at 300 degrees C in different concentrations of H-2 and examined for sensitivity. The results demonstrate that gas sensitive MIS capacitors incorporating high-kappa dielectrics, have the potential to operate at high temperatures for long periods of time. This makes them suitable for deployment in hostile conditions, where regular servicing may not be possible.


Publication metadata

Author(s): Furnival BJD, Wright NG, Horsfall AB

Editor(s): Devaty, R.P., Dudley, M., Chow, T.P., Neudeck, P.G.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM)

Year of Conference: 2012

Pages: 809-812

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.809

DOI: 10.4028/www.scientific.net/MSF.717-720.809

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9783037854198


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