Lookup NU author(s): Benjamin Furnival,
Professor Nick Wright,
Dr Alton Horsfall
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
In this work a Pt/HfO2/SiO2/SiC MIS capacitor is exposed in air at 400 degrees C for 1000 hours, with its oxide capacitance, flatband voltage and density of interface traps being measured at various time intervals. After the structure has been shown to operate reliably for extensive periods of time at 400 degrees C, the C-V characteristics of a device from the same fabrication batch are measured at 300 degrees C in different concentrations of H-2 and examined for sensitivity. The results demonstrate that gas sensitive MIS capacitors incorporating high-kappa dielectrics, have the potential to operate at high temperatures for long periods of time. This makes them suitable for deployment in hostile conditions, where regular servicing may not be possible.
Author(s): Furnival BJD, Wright NG, Horsfall AB
Editor(s): Devaty, R.P., Dudley, M., Chow, T.P., Neudeck, P.G.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM)
Year of Conference: 2012
Publisher: Trans Tech Publications Ltd.
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum