Toggle Main Menu Toggle Search

Open Access padlockePrints

Direct Frequency Modulation of a High Temperature Silicon Carbide Oscillator

Lookup NU author(s): Daniel Brennan, Dr Konstantin Vasilevskiy, Professor Nick Wright, Dr Alton Horsfall

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

This paper reports on direct frequency modulation of a RF Colpitts oscillator, realised from silicon carbide devices and proprietary components, capable of transmitting sensor data whilst operating at 300 degrees C. Utilizing a reversed biased Schottky diode as a varactor in an LC oscillator, it is possible to modulate the frequency of an RF carrier by applying external voltage signals. These experiments have shown that a 10V bias will increase the frequency by as much as 10%, however signals as low as 10mV are easily detectable with standard silicon receivers.


Publication metadata

Author(s): Brennan D, Vasilevskiy K, Wright N, Horsfall A

Editor(s): Devaty, R.P., Dudley, M., Chow, T.P., Neudeck, P.G.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM)

Year of Conference: 2012

Pages: 1269-1272

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.1269

DOI: 10.4028/www.scientific.net/MSF.717-720.1269

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9783037854198


Actions

Find at Newcastle University icon    Link to this publication


Share