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Light induced degradation in B doped Cz-Si solar cells

Lookup NU author(s): Dr Jose Coutinho, Dr Mark Rayson, Professor Patrick Briddon

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Abstract

We analyse the formation energy of interstitial boron (Bi) and the properties of the defect resulting from its association with an oxygen dimer (BiO2i) to evaluate the possibility that it may be the slow-forming centre responsible for the light-induced degradation of B-doped Si solar cells. However, we find that the formation energy of Bi is too high, and therefore its concentration is negligible. Moreover, we find that the lowest energy form of BiO2i is a shallow donor, and the deep donor form is high in energy. Lowest energy structure of the BiO2i defect.


Publication metadata

Author(s): Carvalho A, Santos P, Coutinho J, Jones R, Rayson MJ, Briddon PR

Publication type: Article

Publication status: Published

Journal: physica status solidi (a)

Year: 2012

Volume: 209

Issue: 10

Pages: 1894-1897

Print publication date: 24/07/2012

ISSN (print): 1862-6300

ISSN (electronic): 1862-6319

Publisher: Wiley - V C H Verlag GmbH & Co. KGaA

URL: http://dx.doi.org/10.1002/pssa.201200196

DOI: 10.1002/pssa.201200196


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