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Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures

Lookup NU author(s): Lucy Martin, Professor Nick Wright, Dr Alton Horsfall

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Abstract

The development of silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key-enabling step in the realisation of low power circuitry for high-temperature applications. This paper describes investigations using the charge pumping technique into the properties of the gate dielectric interface as part of the development of the technology to realise monolithic fabrication of both n and p channel devices. A comparison of the charge pumping technique and the Hill-Coleman and Terman methods is also carried out to explore the feasibility of the technique.


Publication metadata

Author(s): Martin LC, Clark D, Ramsay EP, Murphy AE, Thompson RF, Smith DA, Young RAR, Cormack JD, Wright NG, Horsfall AB

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 9th European Conference on Silicon Carbide and Related Materials

Year of Conference: 2013

Pages: 891-894

Online publication date: 01/01/2013

ISSN: 1662-9752

Publisher: Trans Tech Publications, Inc.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.891

DOI: 10.4028/www.scientific.net/MSF.740-742.891

Library holdings: Search Newcastle University Library for this item

Series Title: Silicon Carbide and Related Materials 2012

ISBN: 9783037856246


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