Lookup NU author(s): Lucy Martin,
Professor Nick Wright,
Dr Alton Horsfall
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
The development of silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key-enabling step in the realisation of low power circuitry for high-temperature applications. This paper describes investigations using the charge pumping technique into the properties of the gate dielectric interface as part of the development of the technology to realise monolithic fabrication of both n and p channel devices. A comparison of the charge pumping technique and the Hill-Coleman and Terman methods is also carried out to explore the feasibility of the technique.
Author(s): Martin LC, Clark D, Ramsay EP, Murphy AE, Thompson RF, Smith DA, Young RAR, Cormack JD, Wright NG, Horsfall AB
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 9th European Conference on Silicon Carbide and Related Materials
Year of Conference: 2013
Online publication date: 01/01/2013
Publisher: Trans Tech Publications, Inc.
Library holdings: Search Newcastle University Library for this item
Series Title: Silicon Carbide and Related Materials 2012