Lookup NU author(s): Benjamin Furnival,
Professor Nick Wright,
Dr Alton Horsfall
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
In this work SiC-based MIS capacitors have been fabricated with different contact/high-x dielectric combinations and the temperature dependence of the characteristics have been examined in an N-2 ambient at temperatures between 323K and 673K. The structures utilise either a Pt or Pd catalytic gate contact and a TiO2 or HfO2 high-K dielectric, all of which are grown on a thin SiO2 layer, thermally grown on the Si face of a 4H SiC epitaxial layer. The MIS capacitors have been studied in an N-2 ambient between 323K and 673K and observations show that V-EB reduces with increasing temperature. The majority of this variation is caused a reduction in the D-it influencing the structures electrical characteristics, due to a shift in the semiconductors bulk potential, which is due to the lower V-TH of SiC-based MOSFETs at high temperatures.
Author(s): Furnival BJD, Roy SK, Wright NG, Horsfall AB
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 9th European Conference on Silicon Carbide and Related Materials
Year of Conference: 2013
Online publication date: 01/01/2013
Publisher: Trans Tech Publications, Inc.
Library holdings: Search Newcastle University Library for this item
Series Title: Silicon Carbide and Related Materials 2012