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Influence of Contact Metallisation on the High Temperature Characteristics of High-K Dielectrics

Lookup NU author(s): Benjamin Furnival, Sandip Roy, Professor Nick Wright, Dr Alton Horsfall

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Abstract

In this work SiC-based MIS capacitors have been fabricated with different contact/high-x dielectric combinations and the temperature dependence of the characteristics have been examined in an N-2 ambient at temperatures between 323K and 673K. The structures utilise either a Pt or Pd catalytic gate contact and a TiO2 or HfO2 high-K dielectric, all of which are grown on a thin SiO2 layer, thermally grown on the Si face of a 4H SiC epitaxial layer. The MIS capacitors have been studied in an N-2 ambient between 323K and 673K and observations show that V-EB reduces with increasing temperature. The majority of this variation is caused a reduction in the D-it influencing the structures electrical characteristics, due to a shift in the semiconductors bulk potential, which is due to the lower V-TH of SiC-based MOSFETs at high temperatures.


Publication metadata

Author(s): Furnival BJD, Roy SK, Wright NG, Horsfall AB

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 9th European Conference on Silicon Carbide and Related Materials

Year of Conference: 2013

Pages: 837-840

Online publication date: 01/01/2013

ISSN: 1662-9752

Publisher: Trans Tech Publications, Inc.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.837

DOI: 10.4028/www.scientific.net/MSF.740-742.837

Library holdings: Search Newcastle University Library for this item

Series Title: Silicon Carbide and Related Materials 2012

ISBN: 9783037856246


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