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Transport and optical gaps and energy band alignment at organic-inorganic interfaces

Lookup NU author(s): Professor Jon Goss

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Abstract

The transport and optical band gaps for the organic semiconductor tin (II) phthalocyanine (SnPc) and the complete energy band profiles have been determined for organic-inorganic interfaces between SnPc and III-V semiconductors. High throughput measurement of interface energetics over timescales comparable to the growth rates was enabled using in situ and real-time photoelectron spectroscopy combined with Organic Molecular Beam Deposition. Energy band alignment at SnPc interfaces with GaAs, GaP, and InP yields interface dipoles varying from -0.08 (GaP) to -0.83 eV (GaAs). Optical and transport gaps for SnPc and CuPc were determined from photoelectron spectroscopy and from optical absorption using spectroscopic ellipsometry to complete the energy band profiles. For SnPc, the difference in energy between the optical and transport gaps indicates an exciton binding energy of (0.6 +/- 0.3) eV. (C) 2013 AIP Publishing LLC.

Publication metadata

Author(s): Evans DA, Vearey-Roberts AR, Roberts OR, Williams GT, Cooil SP, Langstaff DP, Cabailh G, McGovern IT, Goss JP

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2013

Volume: 114

Issue: 12

Print publication date: 28/09/2013

Online publication date: 26/09/2013

Acceptance date: 12/09/2013

ISSN (print): 0021-8979

ISSN (electronic): 1089-7550

Publisher: AIP Publishing LLC

URL: http://dx.doi.org/10.1063/1.4823518

DOI: 10.1063/1.4823518

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