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Solid phase growth of graphene on silicon carbide by nickel silicidation: graphene formation mechanisms

Lookup NU author(s): Dr Enrique Escobedo-Cousin, Dr Toby Hopf, Professor Nick Wright, Professor Anthony O'Neill, Dr Alton Horsfall, Dr Jon Goss

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Abstract

This work presents experimental evidence of the formation mechanisms of few-layer graphene (FLG) films on SiC by nickel silicidation. FLG is formed by annealing of a 40 nm thick Ni layer on 6H-SiC at 1035 degrees C for 60 s, resulting in a Ni2Si layer which may be capped by any Ni that did not react during annealing. It has been proposed that FLG forms on top of the Ni during the high temperature stage. In contrast, during cooling, carbon atoms which were released during the silicidation reaction may diffuse back towards the Ni2Si/SiC interface to form a second FLG film. After annealing, layer-by-layer de-processing was carried out in order to unequivocally identify the FLG at each location using atomic force microscopy (AFM) and Raman spectroscopy.


Publication metadata

Author(s): Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill A, Horsfall A, Goss J

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Conference on Silicon Carbide and Related Materials 2013

Year of Conference: 2014

Pages: 1162-1165

Publisher: Scientific.Net

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.1162

DOI: 10.4028/www.scientific.net/MSF.778-780.1162


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