Toggle Main Menu Toggle Search

ePrints

Structural and electronic properties of GaN nanowires with embedded InxGa1-xN nanodisks

Lookup NU author(s): Dr Mark Rayson, Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

In the present study, the effects of various types of strain and indium concentration on the total energy and optoelectronic properties of GaN nanowires (NWs) with embedded InxGa1-xN nanodisks (NDs) are examined. In particular, the bi-axial, hydrostatic, and uniaxial strain states of the embedded InxGa1-xN NDs are investigated for multiple In concentrations. Density functional theory is employed to calculate the band structure of the NWs. The theoretical analysis finds that the supercell-size-dependent characteristics calculated for our 972-atom NW models are very close to the infinite supercell-size limit. It is established that the embedded InxGa1-xN NDs do not induce deep states in the band gap of the NWs. A bowing parameter of 1.82 eV is derived from our analysis in the quadratic Vegard's formula for the band gaps at the various In concentrations of the investigated InxGa1-xN NDs in GaN NW structures. It is concluded that up to similar to 10% of In, the hydrostatic strain state is competitive with the bi-axial due to the radial absorption of the strain on the surfaces. Above this value, the dominant strain state is the bi-axial one. Thus, hydrostatic and bi-axial strain components coexist in the embedded NDs, and they are of different physical origin. The bi-axial strain comes from growth on lattice mismatched substrates, while the hydrostatic strain originates from the lateral relaxation of the surfaces. (C) 2015 AIP Publishing LLC.


Publication metadata

Author(s): Kioseoglou J, Pavloudis T, Kehagias T, Komninou P, Karakostas T, Latham CD, Rayson MJ, Briddon PR, Eickhoff M

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2015

Volume: 118

Issue: 3

Print publication date: 21/07/2015

Online publication date: 15/07/2015

Acceptance date: 02/07/2015

ISSN (print): 0021-8979

ISSN (electronic): 1089-7550

Publisher: AIP Publishing LLC

URL: http://dx.doi.org/10.1063/1.4926757

DOI: 10.1063/1.4926757


Altmetrics

Altmetrics provided by Altmetric


Actions

    Link to this publication


Share