Toggle Main Menu Toggle Search

Open Access padlockePrints

Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al2O3 Gate Dielectric Fabricated on SiC Substrates

Lookup NU author(s): Dr Enrique Escobedo-Cousin, Dr Peter King, Professor Anthony O'Neill, Dr Alton Horsfall, Dr Jon Goss

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al2O3 was grown by atomic layer deposition to function as the gate oxide, with an e-beam evaporated seed layer utilized to promote uniform growth of Al2O3 over the graphene. Electrical characterization has been performed on these devices, and temperature-dependent measurements yielded a rise in the maximum transconductance and a significant shifting of the Dirac point as the operating temperature of the transistors was increased.


Publication metadata

Author(s): Hopf T, Vassilevski K, Escobedo-Cousin E, King P, Wright NG, O'Neill AG, Horsfall AB, Goss J, Wells G, Hunt M

Publication type: Article

Publication status: Published

Journal: Materials Science Forum

Year: 2015

Volume: 821-823

Pages: 937-940

Print publication date: 30/06/2015

Online publication date: 30/06/2015

Acceptance date: 21/01/2015

ISSN (print): 0255-5476

ISSN (electronic): 1662-9752

Publisher: Scientific.Net

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.937

DOI: 10.4028/www.scientific.net/MSF.821-823.937


Altmetrics

Altmetrics provided by Altmetric


Actions

Find at Newcastle University icon    Link to this publication


Share