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Development of a classical force field for the oxidized Si surface: Application to Hydrophilic Wafer Bonding

Lookup NU author(s): Dr Daniel Cole

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Abstract

We have developed a classical two- and three-body interaction potential to simulate the hydroxylated, natively oxidized Si surface in contact with water solutions, based on the combination and extension of the Stillinger-Weber potential and of a potential originally developed to simulate SiO 2 SiO2 polymorphs. The potential parameters are chosen to reproduce the structure, charge distribution, tensile surface stress, and interactions with single water molecules of a natively oxidized Si surface model previously obtained by means of accurate density functional theory simulations. We have applied the potential to the case of hydrophilic silicon wafer bonding at room temperature, revealing maximum room temperature work of adhesion values for natively oxidized and amorphous silicasurfaces of 97 and 90mJ/m 2 90mJ∕m2 , respectively, at a water adsorption coverage of approximately 1 ML. The difference arises from the stronger interaction of the natively oxidizedsurface with liquid water, resulting in a higher heat of immersion (203 vs 166mJ/m 2 166mJ∕m2 ), and may be explained in terms of the more pronounced water structuring close to the surface in alternating layers of larger and smaller densities with respect to the liquid bulk. The computed force-displacement bonding curves may be a useful input for cohesive zone models where both the topographic details of the surfaces and the dependence of the attractive force on the initial surface separation and wetting can be taken into account.


Publication metadata

Author(s): Cole DJ, Payne MC, Csanyi G, Spearing SM, Colombi-Ciacchi L

Publication type: Article

Publication status: Published

Journal: Journal of Chemical Physics

Year: 2007

Volume: 127

Issue: 20

Print publication date: 28/11/2007

Online publication date: 27/11/2007

ISSN (print): 0021-9606

ISSN (electronic): 1089-7690

Publisher: AIP Publishing

URL: http://dx.doi.org/10.1063/1.2799196

DOI: 10.1063/1.2799196


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