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UIS failure mechanism of SiC power MOSFETs

Lookup NU author(s): Asad Fayyaz, Dr Jesus Urresti Ibanez

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Abstract

This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown events. Therefore, avalanche ruggedness is an important feature of power devices enabling snubber-less converter design and is also a desired feature in certain applications such as automotive. It is essential to thoroughly characterize SiC power MOSFETs for better understanding of their robustness and more importantly of their corresponding underling physical mechanisms responsible for failure in order to inform device design and technology evolution. Experimental results during UIS at failure and 2D TCAD simulation results are presented in this study.


Publication metadata

Author(s): Fayyaz A, Castellazzi A, Romano G, Riccio M, Irace A, Urresti J, Wright N

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

Year of Conference: 2016

Pages: 118-122

Online publication date: 29/12/2016

Acceptance date: 01/01/1900

Publisher: IEEE

URL: https://doi.org/10.1109/WiPDA.2016.7799921

DOI: 10.1109/WiPDA.2016.7799921

Library holdings: Search Newcastle University Library for this item

ISBN: 9781509015764


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