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Process compatibility of heavily nitrogen doped layers formed by ion implantation in silicon carbide devices

Lookup NU author(s): Sandip Roy, Neal Wood, Dr Alton Horsfall, Professor Nick Wright

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Abstract

© (2015) Trans Tech Publications, Switzerland. Heavily doped layers were formed in 4H-SiC device epitaxial structures comprised of moderately doped n layer (channel) and heavily doped p+ layer (gate). The n+ regions were formed by local ion implantation of nitrogen followed by post-implantation annealing with graphite capping layer. It was shown that annealing at 1700 °C is required for complete activation of implanted impurities. The post-implantation anneals were found to have no significant effect on the moderately nitrogen doped channel layer. On the other hand it resulted in noticeable deterioration of electrical propertied of heavily doped epitaxial p+ layers leading to the increase of contact resistivity which has to be taken into account in design and processing of SiC devices.


Publication metadata

Author(s): Vassilevski K, Roy SK, Wood N, Horsfall AB, Wright NG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: European Conference on Silicon Carbide and Related Materials (ECSCRM 2014)

Year of Conference: 2015

Pages: 411-415

Online publication date: 30/06/2015

Acceptance date: 03/02/2015

Publisher: Trans Tech Publications Ltd

URL: http://doi.org/10.4028/www.scientific.net/MSF.821-823.411

DOI: 10.4028/www.scientific.net/MSF.821-823.411

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9783038354789


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