Lookup NU author(s): Sandip Roy,
Professor Nick Wright,
Dr Alton Horsfall
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
© (2015) Trans Tech Publications, Switzerland. Ohmic contacts with low contact resistance, smooth surface morphology, and a welldefined edge profile are essential to ensure optimal device performance. Ohmic contacts often require annealing under vacuum at over 1000 °C, whilst high-κ dielectrics are usually annealed in O2 rich ambient at temperatures of 800 °C or less, affecting the specific contact resistivity (ρC) and RMS surface roughness. Therefore, protection of the Ohmic contacts during the annealing of a high-κ dielectric layer is a key enabling step in the realisation of high performance MOSFET structures. In order to prevent damage during the high-κ formation, a passivation layer capable of protecting the contacts during annealing is required. In this work we have investigated the suitability of PECVD silicon nitride as a passivation layer to protect Ohmic contacts during high temperature, oxygen rich annealing.
Author(s): Roy SK, Vassilevski K, Wright NG, Horsfall AB
Editor(s): Chaussende D; Ferro G
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
Year of Conference: 2015
Online publication date: 01/06/2015
Acceptance date: 01/01/1900
Publisher: Trans Tech Publications Ltd
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum