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Physical and electrical properties of single Zn2SnO4 nanowires

Lookup NU author(s): Dr Stevin Pramana

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Abstract

Electrical characterizations of single Zn2 Sn O4 (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the Zn 2 Sn O4 nanowire were measured to be 5.6 cm and 0.2 cm2/Vs, respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices. © 2010 The Electrochemical Society.


Publication metadata

Author(s): Karthik KRG, Andreasson BP, Sun C, Pramana SS, Varghese B, Sow CH, Mathews N, Wong LH, Mhaisalkar SG

Publication type: Article

Publication status: Published

Journal: Electrochemical and Solid-State Letters

Year: 2011

Volume: 14

Issue: 1

Pages: K5-K7

Online publication date: 03/11/2010

ISSN (print): 1099-0062

Publisher: The Electrochemical Society

URL: https://doi.org/10.1149/1.3505875

DOI: 10.1149/1.3505875


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