Toggle Main Menu Toggle Search

Open Access padlockePrints

Electrical stability impact of gate oxide in channel implanted SiC NMOS and PMOS transistors

Lookup NU author(s): Idzdihar Idris, Dr Ming-Hung Weng, Dr Hua Khee Chan, Professor Nick Wright, Dr Alton Horsfall

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

© 2017 Trans Tech Publications, Switzerland. Operation of SiC MOSFETs beyond 300°C opens up opportunities for a wide range of CMOS based digital and analogue applications. However the majority of the literature focuses only on the optimization of a single type of MOS device (either PMOS or more commonly NMOS) and there is a lack of a comprehensive study describing the challenge of optimizing CMOS devices. This study reports on the impact of gate oxide performance in channel implanted SiC on the electrical stability for both NMOS and PMOS capacitors and transistors. Parameters including interface state density (Dit), flatband voltage (VFB), threshold voltage (VTH) and effective charge (NEFF) have been acquired from C-V characteristics to assess the effectiveness of the fabrication process in realising high quality gate dielectrics. The performance of SiC based CMOS transistors were analyzed by correlating the characteristics of the MOS interface properties, the MOSFET 1/f noise performance and transistor on-state stability at 300°C. The observed instability of PMOS devices is more significant than in equivalent NMOS devices. The results from MOS capacitors comprising interface state density (Dit), flatband voltage (VFB), threshold voltage (VTH) for both N and P MOS are in agreement with the expected characteristics of the respective transistors.


Publication metadata

Author(s): Idris MI, Weng MH, Chan H-K, Murphy AE, Smith DA, Young RAR, Ramsay EP, Clark DT, Wright NG, Horsfall AB

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016)

Year of Conference: 2017

Pages: 513-516

Online publication date: 01/05/2017

Acceptance date: 02/04/2016

ISSN: 1662-9752

Publisher: Trans Tech Publications Ltd

URL: https://doi.org/10.4028/www.scientific.net/MSF.897.513

DOI: 10.4028/www.scientific.net/MSF.897.513

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9783035710434


Actions

Find at Newcastle University icon    Link to this publication


Share