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Characterisation of 4H-SiC MOS capacitor with a protective coating for harsh environments applications

Lookup NU author(s): Sandip Roy, Dr Jesus Urresti Ibanez, Professor Anthony O'Neill, Professor Nick Wright, Dr Alton Horsfall

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Abstract

© 2017 Trans Tech Publications, Switzerland. Oxygen free Ohmic contacts are essential for the realisation of high performance devices. Ohmic contacts in SiC often require annealing under vacuum at over 1000 °C, whilst high-κ dielectrics are usually annealed in O2 rich ambient at temperatures of 800 °C or less, affecting the electrical and surface characteristics. Therefore, protection of the Ohmic contacts during the annealing of a high-κ dielectric layer is a key enabling step in the realisation of high performance MOS structures. In order to prevent damage during the high-κ formation the use of silicon nitride as a passivation layer, capable of protecting the contacts during annealing,has been investigated. In this work we have investigated and compared silicon nitride protected high-κ dielectric SiC based MOS capacitors with the unprotected SiC MOS devices in terms of electrical and optical characteristics.


Publication metadata

Author(s): Roy SK, Ibanez JU, O'Neill AG, Wright NG, Horsfall AB

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)

Year of Conference: 2017

Pages: 327-330

Online publication date: 15/05/2017

Acceptance date: 10/02/2017

ISSN: 1662-9752

Publisher: Trans Tech Publications Ltd

URL: https://doi.org/10.4028/www.scientific.net/MSF.897.327

DOI: 10.4028/www.scientific.net/MSF.897.327

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9783035710434


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