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Silicon carbide radiation detectors for medical applications

Lookup NU author(s): wina Mohamed, Idzdihar Idris, Professor Nick Wright, Dr Alton Horsfall

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Abstract

© 2017 Trans Tech Publications, Switzerland. There is increasing interest in the development of radiation hard detector materials with the capability to discriminate within wide dose range and high radiation tolerance that are sensitive, and show a linear response. In this study, fabricated 4H-SiC Schottky diodes were exposed to dose rates ranging from 0.02 to 0.185 mGy/min to analyse the linearity and sensitivity at room temperature. High linearity response presented from the graph of current signal plotted versus dose rate which show enhancement of 104 in comparison to previous studies. The sensitivity measured at different bias voltages by exposing to 0.185 mGy/min dose rate show good reproducibility and stability of the current signal with time. Collected charge presented for all diodes exhibit linear behaviour of photon induced collected charge with the sensitivity between 1.4 to 8.38 × 105 nC/Gy for the 0.20 to 1 mGy absorbed dose range. Thus, these devices are ideally suited for the realisation of radiation detectors at moderate dose range.


Publication metadata

Author(s): Mohamed NS, Idris MI, Wright NG, Horsfall AB

Editor(s): Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016)

Year of Conference: 2017

Pages: 626-629

Online publication date: 01/05/2017

Acceptance date: 02/04/2016

ISSN: 1662-9752

Publisher: Trans Tech Publications Ltd

URL: https://doi.org/10.4028/www.scientific.net/MSF.897.626

DOI: 10.4028/www.scientific.net/MSF.897.626

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9783035710434


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