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Hot-Phonon Effects on High-Field Transport in GaN and AlN

Lookup NU author(s): Dr Angela Dyson, Dr Daniel Naylor

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Abstract

We have studied the effects of hot phonons on the high-field transport in GaN and AlN. The dynamics of the nonequilibrium electron-longitudinal optical phonon system is studied through an ensemble Monte Carlo code. We find that under steady-state conditions, the hot phonons cause the randomization of the electron momentum, and increase their mean energy leading to diffusive heating. Average electron energies of three and two times those in the equilibrium phonon cases are found for GaN and AlN at the applied fields of 100 and 350 kV/cm, respectively. The electron velocity is reduced compared with the case with equilibrium phonons at the lattice temperature. In the transient regime, peak velocities reached at overshoot are reduced when the nonequilibrium phonons are considered.


Publication metadata

Author(s): Dyson A, Naylor DR, Ridley BK

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Electron Devices

Year: 2015

Volume: 62

Issue: 11

Pages: 3613-3618

Print publication date: 01/11/2015

Online publication date: 17/09/2015

Acceptance date: 24/08/2015

ISSN (print): 0018-9383

ISSN (electronic): 1557-9646

Publisher: IEEE

URL: https://doi.org/10.1109/TED.2015.2476383

DOI: 10.1109/TED.2015.2476383


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