Lookup NU author(s): Dr Toby Hallam
This is the final published version of an article that has been published in its final definitive form by American Institute of Physics Inc., 2017.
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Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (Re). High-Resolution Scanning Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy are used to identify Re in interstitial and lattice sites of the MoS2 structure. Hall-effect measurements confirm the electron donating influence of Re in MoS2, while the nominally undoped films exhibit a net p-type doping. Density functional theory (DFT) modelling indicates that Re on Mo sites is the origin of the n-type doping, whereas S-vacancies have a p-type nature, providing an explanation for the p-type behaviour of nominally undoped MoS2films.
Author(s): Hallam T, Monaghan S, Gity F, Ansari L, Schmidt M, Downing C, Cullen CP, Nicolosi V, Hurley PK, Duesberg GS
Publication type: Article
Publication status: Published
Journal: Applied Physics Letters
Online publication date: 14/11/2017
Acceptance date: 20/10/2017
Date deposited: 11/01/2018
ISSN (print): 0003-6951
ISSN (electronic): 1077-3118
Publisher: American Institute of Physics Inc.
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