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Rhenium-doped MoS2 films

Lookup NU author(s): Dr Toby Hallam

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This is the final published version of an article that has been published in its final definitive form by American Institute of Physics Inc., 2017.

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Abstract

Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (Re). High-Resolution Scanning Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy are used to identify Re in interstitial and lattice sites of the MoS2 structure. Hall-effect measurements confirm the electron donating influence of Re in MoS2, while the nominally undoped films exhibit a net p-type doping. Density functional theory (DFT) modelling indicates that Re on Mo sites is the origin of the n-type doping, whereas S-vacancies have a p-type nature, providing an explanation for the p-type behaviour of nominally undoped MoS2films.


Publication metadata

Author(s): Hallam T, Monaghan S, Gity F, Ansari L, Schmidt M, Downing C, Cullen CP, Nicolosi V, Hurley PK, Duesberg GS

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2017

Volume: 111

Issue: 20

Online publication date: 14/11/2017

Acceptance date: 20/10/2017

Date deposited: 11/01/2018

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics Inc.

URL: https://doi.org/10.1063/1.4995220

DOI: 10.1063/1.4995220


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