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Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO2 / Al2O3 Gate Stack

Lookup NU author(s): Faiz Arith, Dr Jesus Urresti Ibanez, Dr Konstantin Vasilevskiy, Dr Sarah Olsen, Professor Nick Wright, Professor Anthony O'Neill

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This is the authors' accepted manuscript of an article that has been published in its final definitive form by IEEE, 2018.

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Abstract

A field effect mobility of 125 cm2/V·s and a subthreshold slope of 130 mV/dec were obtained in enhancement mode 4H-SiC MOSFETs with a channel length of 2 µm. The fabricated devices utilised a gate stack comprising a 0.7 nm thin thermal SiO2, thereby reducing defects following oxidation, and a 40 nm thick Al2O3 formed by atomic layer deposition. A high mobility was maintained over a wide gate voltage range and resulted in increases of up to 120x in drain current for the same gate overdrive voltage compared to MOSFETs having a thicker thermal SiO2 gate stack with the same effective oxide thickness fabricated alongside.Nitridation is not included in either MOSFET process.


Publication metadata

Author(s): Arith F, Urresti J, Vasilevskiy K, Olsen S, Wright N, O'Neill A

Publication type: Article

Publication status: Published

Journal: IEEE Electron Device Letters

Year: 2018

Volume: 39

Issue: 4

Pages: 564-567

Online publication date: 19/02/2018

Acceptance date: 13/02/2018

Date deposited: 15/02/2018

ISSN (print): 0741-3106

ISSN (electronic): 1558-0563

Publisher: IEEE

URL: https://doi.org/10.1109/LED.2018.2807620

DOI: 10.1109/LED.2018.2807620

Data Source Location: http://dx.doi.org/10.17634/120975-1


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