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Understanding charge transport in lead iodide perovskite thin-film field-effect transistors

Lookup NU author(s): Dr Pablo Docampo

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This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).


Abstract

2017 © The Authors, some rights reserved. Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI3). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (mFET) of 0.5 cm2/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA+ cations, and thermal vibrations of the lead halide inorganic cages.


Publication metadata

Author(s): Senanayak SP, Yang B, Thomas TH, Giesbrecht N, Huang W, Gann E, Nair B, Goedel K, Guha S, Moya X, McNeill CR, Docampo P, Sadhanala A, Friend RH, Sirringhaus H

Publication type: Article

Publication status: Published

Journal: Science Advances

Year: 2017

Volume: 3

Issue: 1

Print publication date: 04/01/2017

Acceptance date: 21/12/2016

Date deposited: 27/02/2018

ISSN (print): 2375-2548

Publisher: American Association for the Advancement of Science

URL: http://doi.org/10.1126/sciadv.1601935

DOI: 10.1126/sciadv.1601935


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