Lookup NU author(s): Dr Toby Hallam
This is the authors' accepted manuscript of an article that has been published in its final definitive form by Wiley-VCH Verlag, 2018.
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© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Owing to their desirable electrical and thermoelectric properties, transition metal dichalcogenides (TMDs) have attracted significant attention. It is important to develop an easy synthetic method and a simple device fabrication process for TMDs. In this study, WSe2 films were synthesized on a large scale by thermally assisted conversion (TAC) of W films on SiO2/Si substrates at 600 °C. The TAC process yields homogeneous polycrystalline films of controlled thickness over large areas which have the advantage that they can be adapted for mass production for applications in electronics and thermoelectrics. In this regard, pre-patterning of the deposited metal films allows for devices to be easily fabricated without any etch process. UV-lithography-defined W structures have been deposited and after conversion to WSe2 their electrical and thermoelectric properties have been studied. Using e-beam lithography, a field effect transistor (FET) with a WSe2 channel was fabricated. This showed p-type behavior and reasonable field effect mobility value. The thermoelectric properties of WSe2 thin films were analyzed by additionally integrating micro heating elements to the WSe2 FET. The maximum Seebeck coefficient and power factor (S2·σ) values were calculated to be ≈61 mV·K-1 (Vg = 45 V) and ≈1.3 nW·K-2·cm-1, respectively.
Author(s): Kim W, Kim H, Hallam T, McEvoy N, Gatensby R, Nerl HC, O'Neill K, Siris R, Kim G-T, Duesberg GS
Publication type: Article
Publication status: Published
Journal: Advanced Materials Interfaces
Print publication date: 08/06/2018
Online publication date: 15/03/2018
Acceptance date: 21/01/2018
Date deposited: 04/06/2018
ISSN (electronic): 2196-7350
Publisher: Wiley-VCH Verlag
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