Analysis of 3-dimensional 4H-SiC MOS capacitors grown by atomic layer deposition of AL2O3

Idris, MI; Wright, NG; Horsfall, AB

doi:10.4028/www.scientific.net/MSF.924.490

Analysis of 3-dimensional 4H-SiC MOS capacitors grown by atomic layer deposition of AL2O3

Lookup NU author(s): Idzdihar Idris, Professor Nick Wright, Dr Alton Horsfall

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

© 2018 Trans Tech Publications, Switzerland. 3-Dimensional 4H-SiC metal-oxide-semiconductor capacitors have been fabricated to determine the effect of the sidewall on the characteristics of 3-Dimentional gate structures. Al2O3 deposited by Atomic Layer Deposition (ALD) was used as the gate dielectric layer on the trench structure. The 3-D MOS capacitors exhibit increasing accumulation capacitance with excellent linearity as the sidewall area increases, indicating that ALD results in a highly conformal dielectric film. The capacitance – voltage characteristics also show evidence of a second flatband voltage, located at a higher bias than that seen for purely planar devices on the same sample. We also observe that the oxide capacitance of planar and 3-D MOS capacitors increases with temperature. Finally, we have found that the 3-D MOS capacitor has a weaker temperature dependence of flatband voltage in comparison to the conventional planar MOS capacitor due to the incorporation of the (Formula Presented) plane in the sidewall.