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Effect of post oxide annealing on the electrical and interface 4H-SiC/Al₂O₃ MOS capacitors

Lookup NU author(s): Idzdihar Idris, Professor Nick Wright, Dr Alton Horsfall

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Abstract

© 2018 Trans Tech Publications, Switzerland. This paper reports on the effect of forming gas annealing on the C-V characteristics and stability of Al2O3/SiC MOS capacitors deposited by atomic layer deposition, (ALD). C-V and IV measurements were performed to assess the quality of the Al2O3 layer and the Al2O3/SiC interface. In comparison to as-deposited sample, the post oxide annealing (POA) in forming gas at high temperatures has improved the stability of C-V characteristic and the properties at the interface of Al2O3/SiC capacitors. However, the oxide capacitance and oxide breakdown electric field degrade with increased annealing temperature. The results provide indications to improve the performance of Al2O3/SiCcapacitors 4H-SiC devices by optimizing the annealing temperature.

Publication metadata

Author(s): Idris MI, Wright NG, Horsfall AB

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)

Year of Conference: 2018

Pages: 486-489

Online publication date: 01/06/2018

Acceptance date: 02/04/2016

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd

URL: https://doi.org/10.4028/www.scientific.net/MSF.924.486

DOI: 10.4028/www.scientific.net/MSF.924.486

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9783035711455

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