Lookup NU author(s): Dr Ming-Hung Weng,
Dr Alton Horsfall
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© 2018 Trans Tech Publications, Switzerland. A high temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300˚C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integration circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300ºC and beyond.
Author(s): Weng MH, Idris MI, Wright S, Clark DT, Young RAR, McIntosh JR, Gordon DL, Horsfall AB
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)
Year of Conference: 2018
Online publication date: 01/06/2018
Acceptance date: 02/04/2016
Publisher: Trans Tech Publications Ltd
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum