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First demonstration of high temperature SiC CMOS gate driver in bridge leg for hybrid power module application

Lookup NU author(s): Dr Ming-Hung Weng, Idzdihar Idris, Dr Alton Horsfall


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© 2018 Trans Tech Publications, Switzerland. A high temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300˚C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integration circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300ºC and beyond.

Publication metadata

Author(s): Weng MH, Idris MI, Wright S, Clark DT, Young RAR, McIntosh JR, Gordon DL, Horsfall AB

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)

Year of Conference: 2018

Pages: 854-857

Online publication date: 01/06/2018

Acceptance date: 02/04/2016

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd


DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9783035711455


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