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Junction Temperature Estimation for IGBT Modules Applied to EVs Based on High-Frequency Signal Sweeping Technique

Lookup NU author(s): Cuili Chen, Professor Volker Pickert, Dr Charalampos Tsimenidis, Dr Maher Al-Greer

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Abstract

© 2018 IEEE. It is of paramount importance to measure the operating temperature of power semiconductor devices that form the essential part of electric power drive trains for electric vehicles. This paper introduces an alternative method to determine the junction temperature of Insulated Gate Bipolar Transistor (IGBT) power modules. The proposed scheme relies upon injecting a high frequency/low power signal into the gate-emitter terminals of an IGBT and then analysing the corresponding frequency response characteristics of the gate-emitter circuit. A small-signal model for the gate-emitter impedance of a 100 A IGBT power module has been developed, and its frequency response is examined and analysed by SaberRD. The frequency response of the model is compared with experimental data obtained from a network analyser. Both, simulation and practical results confirm the feasibility to detect the junction temperature of IGBTs.


Publication metadata

Author(s): Chen C, Pickert V, Tsimenidis C, Al-Greer M

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: ITEC Asia-Pacific 2018 - 2018 IEEE Transportation Electrification Conference and Expo, Asia-Pacific: E-Mobility: A Journey from Now and Beyond

Year of Conference: 2018

Online publication date: 13/08/2018

Acceptance date: 06/06/2018

Publisher: IEEE

URL: https://doi.org/10.1109/ITEC-AP.2018.8433287

DOI: 10.1109/ITEC-AP.2018.8433287

Library holdings: Search Newcastle University Library for this item

ISBN: 9781538657829


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