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High mobility 4H-SiC MOSFET using a thin SiO2/Al2O3 gate stack

Lookup NU author(s): Faiz Arith, Dr Jesus Urresti Ibanez, Dr Konstantin Vasilevskiy, Dr Sarah Olsen, Professor Nick Wright, Professor Anthony O'Neill

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Abstract

© 2018 IEEE. Enhancement mode 4H-SiC MOSFETs with a channel length of 2 μm achieved a room temperature field effect mobility of 125 cm2/V·s and a subthreshold slope of 130 mY/dec. The devices demonstrated a remarkable temperature stability up to 300°C, remaining enhancement mode with high mobility and an ON/OFF current ratio in excess of 106. The fabricated devices utilised a gate stack comprising a 0.7 nm thin thermal SiO2, thereby reducing defects following oxidation, and a 40 nm thick Ah03 formed by atomic layer deposition. A high mobility was maintained over a wide gate voltage range.


Publication metadata

Author(s): Arith F, Urresti J, Vasilevskiy K, Olsen S, Wright N, O'Neill A

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 48th European Solid-State Device Research Conference (ESSDERC)

Year of Conference: 2018

Pages: 30-33

Online publication date: 11/10/2018

Acceptance date: 02/04/2018

ISSN: 2378-6558

Publisher: IEEE

URL: https://doi.org/10.1109/ESSDERC.2018.8486896

DOI: 10.1109/ESSDERC.2018.8486896

Library holdings: Search Newcastle University Library for this item

ISBN: 9781538654019


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