Lookup NU author(s): Faiz Arith,
Dr Jesus Urresti Ibanez,
Dr Konstantin Vasilevskiy,
Dr Sarah Olsen,
Professor Nick Wright,
Professor Anthony O'Neill
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© 2018 IEEE. Enhancement mode 4H-SiC MOSFETs with a channel length of 2 μm achieved a room temperature field effect mobility of 125 cm2/V·s and a subthreshold slope of 130 mY/dec. The devices demonstrated a remarkable temperature stability up to 300°C, remaining enhancement mode with high mobility and an ON/OFF current ratio in excess of 106. The fabricated devices utilised a gate stack comprising a 0.7 nm thin thermal SiO2, thereby reducing defects following oxidation, and a 40 nm thick Ah03 formed by atomic layer deposition. A high mobility was maintained over a wide gate voltage range.
Author(s): Arith F, Urresti J, Vasilevskiy K, Olsen S, Wright N, O'Neill A
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 48th European Solid-State Device Research Conference (ESSDERC)
Year of Conference: 2018
Online publication date: 11/10/2018
Acceptance date: 02/04/2018
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