Lookup NU author(s): Professor Anthony O'Neill,
Dr Jesus Urresti Ibanez,
Dr Konstantin Vasilevskiy,
Professor Nick Wright,
Dr Sarah Olsen
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
© 2018 IEEE. Enhancement mode 4H-SiC MOSFETs with a channel length of 2 μm achieved a room temperature field effect mobility of 125 cm2/V•s and a subthreshold slope of 130 mV/dec. The temperature dependence of mobility up to 300 °C indicates that phonon scattering has replaced Coulombic scattering in these devices, which remain enhancement mode with high mobility and an ON/OFF current ratio in excess of 106. The fabricated devices utilised a gate stack comprising a 0.7 nm thin thermal SiO2, thereby reducing defects following oxidation, and a 40 nm thick Al2O3 formed by atomic layer deposition.
Author(s): Orneill A, Arith F, Urresti J, Vasilevskiy K, Wright N, Olsen S
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
Year of Conference: 2018
Online publication date: 06/12/2018
Acceptance date: 02/04/2018
Library holdings: Search Newcastle University Library for this item