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High Mobility 4H-SiC MOSFET

Lookup NU author(s): Professor Anthony O'Neill, Faiz Arith, Dr Jesus Urresti Ibanez, Dr Konstantin Vasilevskiy, Professor Nick Wright, Dr Sarah Olsen

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Abstract

© 2018 IEEE. Enhancement mode 4H-SiC MOSFETs with a channel length of 2 μm achieved a room temperature field effect mobility of 125 cm2/V•s and a subthreshold slope of 130 mV/dec. The temperature dependence of mobility up to 300 °C indicates that phonon scattering has replaced Coulombic scattering in these devices, which remain enhancement mode with high mobility and an ON/OFF current ratio in excess of 106. The fabricated devices utilised a gate stack comprising a 0.7 nm thin thermal SiO2, thereby reducing defects following oxidation, and a 40 nm thick Al2O3 formed by atomic layer deposition.


Publication metadata

Author(s): Orneill A, Arith F, Urresti J, Vasilevskiy K, Wright N, Olsen S

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Year of Conference: 2018

Pages: 1-4

Online publication date: 06/12/2018

Acceptance date: 02/04/2018

Publisher: IEEE

URL: https://doi.org/10.1109/ICSICT.2018.8564911

DOI: 10.1109/ICSICT.2018.8564911

Library holdings: Search Newcastle University Library for this item

ISBN: 9781538644409


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