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AR-Aided Smart Sensing for In-Line Condition Monitoring of IGBT Wafer

Lookup NU author(s): Kongjing Li, Professor Gui Yun Tian, Xiaotian Chen, Chaoqing Tang, Professor Bin Gao, Professor Xiangning He, Professor Nick Wright

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Abstract

© 1982-2012 IEEE.This paper describes an augmented reality (AR)-aided smart sensing technique for in-line condition monitoring of insulated-gate bipolar transistor (IGBT) wafers. A series of signal processing algorithms are applied for enabling sensor intelligence. Based on electromagnetic infrared-visible fusion (IVF), a supplementary palpable three-dimensional thermography layer is integrated with an IGBT wafer in real world environment. Before the IVF, independent component analysis is implemented to identify defects in the wafer. The proposed AR-aided smart sensing technique enhances user's perception and interaction between the industrial systems and the surrounding world. In contrast to conventional sensor techniques, it provides nondestructive testing and evaluation based high-throughput in-line condition monitoring method. The advantages of noncontact and time efficient of this smart sensing technique potentially bring huge benefit to yield management and production efficiency. AR-aided smart sensing can improve the productivity, quality, and reliability of power electronic materials and devices, as well as in other industrial applications.


Publication metadata

Author(s): Li K, Tian GY, Chen X, Tang C, Luo H, Li W, Gao B, He X, Wright N

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Industrial Electronics

Year: 2019

Volume: 66

Issue: 10

Pages: 8197-8204

Print publication date: 01/10/2019

Online publication date: 01/01/2019

Acceptance date: 22/11/2018

ISSN (print): 0278-0046

Publisher: Institute of Electrical and Electronics Engineers Inc.

URL: https://doi.org/10.1109/TIE.2018.2886775

DOI: 10.1109/TIE.2018.2886775


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