Lookup NU author(s): Kongjing Li,
Professor Gui Yun Tian,
Professor Bin Gao,
Professor Xiangning He,
Professor Nick Wright
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
© 1982-2012 IEEE.This paper describes an augmented reality (AR)-aided smart sensing technique for in-line condition monitoring of insulated-gate bipolar transistor (IGBT) wafers. A series of signal processing algorithms are applied for enabling sensor intelligence. Based on electromagnetic infrared-visible fusion (IVF), a supplementary palpable three-dimensional thermography layer is integrated with an IGBT wafer in real world environment. Before the IVF, independent component analysis is implemented to identify defects in the wafer. The proposed AR-aided smart sensing technique enhances user's perception and interaction between the industrial systems and the surrounding world. In contrast to conventional sensor techniques, it provides nondestructive testing and evaluation based high-throughput in-line condition monitoring method. The advantages of noncontact and time efficient of this smart sensing technique potentially bring huge benefit to yield management and production efficiency. AR-aided smart sensing can improve the productivity, quality, and reliability of power electronic materials and devices, as well as in other industrial applications.
Author(s): Li K, Tian GY, Chen X, Tang C, Luo H, Li W, Gao B, He X, Wright N
Publication type: Article
Publication status: Published
Journal: IEEE Transactions on Industrial Electronics
Print publication date: 01/10/2019
Online publication date: 01/01/2019
Acceptance date: 22/11/2018
ISSN (print): 0278-0046
Publisher: Institute of Electrical and Electronics Engineers Inc.
Altmetrics provided by Altmetric