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Lookup NU author(s): Idris Idris, Dr Ming-Hung Weng, Ryan Siddall, Professor Nick Wright, Dr Alton Horsfall
This is the authors' accepted manuscript of an article that has been published in its final definitive form by Institute of Physics Publishing, 2019.
For re-use rights please refer to the publisher's terms and conditions.
© 2019 IOP Publishing Ltd.The effect of phosphorus inclusion on different bias stress at high electric field on phosphorus doped SiO2 is investigated by electrical measurements of SiC MOS capacitors. 1 MHz C-V measurements with (1) different bias hold time (up to 999 s at room and high temperature of 250 °C), (2) different applied gate voltage (±10, 20 and 30 V without stress time) and (3) different bias hold time at high voltage (±30 V) were taken to observe the evolution of flatband voltage, effective oxide charge density and interface state density. In this investigation, the characteristics were measured in both sweep directions and compared to those obtained from undoped SiO2 samples. At 250 °C, the flatband voltage of phosphorus-doped SiO2 samples shows a significant shift to the positive with increasing bias hold time. Similar trends are observed with the characteristics obtained at room temperature, but the shifts are less significant. Both undoped and phosphorus-doped samples show positive flatband shift when a higher bias was applied for longer hold times, but the latter demonstrated more significant changes. We conclude that the phosphorus ions increase the instability of the electrical characteristics related to the generation of mobile charges in the SiO2, resulting in the injection of electrons from the semiconductor to the oxide. Therefore, the accumulated negative charge in phosphorus-doped SiO2 resulting from the injection of electrons, which is enhanced by the mobile charge, is responsible for the enhanced positive shift in C-V and _Rfis I-V characteristics.
Author(s): Idris MI, Weng MH, Peters A, Siddall RJ, Townsend NJ, Wright NG, Horsfall AB
Publication type: Article
Publication status: Published
Journal: Journal of Physics D: Applied Physics
Year: 2019
Volume: 52
Issue: 50
Online publication date: 25/09/2019
Acceptance date: 05/09/2019
Date deposited: 28/11/2019
ISSN (print): 0022-3727
ISSN (electronic): 1361-6463
Publisher: Institute of Physics Publishing
URL: https://doi.org/10.1088/1361-6463/ab41dc
DOI: 10.1088/1361-6463/ab41dc
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