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Lookup NU author(s): Dr Toby Hallam
This is the authors' accepted manuscript of an article that has been published in its final definitive form by Wiley - VCH Verlag GmbH & Co. KGaA, 2017.
For re-use rights please refer to the publisher's terms and conditions.
This report details the controllable doping of graphene through post‐growth plasma treatments. Defects are controllably introduced into the lattice using argon plasma, following this sample are exposed to ammonia/hydrogen plasma. During this nitrogen atoms get incorporated causing partial restoration of the graphene lattice. The damage levels are characterised by Raman and X‐ray photoelectron spectroscopies. The incorporation of nitrogen into the graphene lattice provides significant n‐doping. This is confirmed by the fabrication of graphene field‐effect transistors which show clear n‐type behaviour and mobilities not significantly less than those of pristine graphene. Thus this work demonstrates the viability of plasma treatments to reliably dope graphene.
Author(s): McManus JB, Hennessy A, Cullen CP, Hallam T, McEvoy N, Duesberg GS
Publication type: Article
Publication status: Published
Journal: physica status solidi (b)
Print publication date: 30/11/2017
Online publication date: 25/09/2017
Acceptance date: 25/09/2017
Date deposited: 10/02/2020
ISSN (print): 0370-1972
ISSN (electronic): 1521-3951
Publisher: Wiley - VCH Verlag GmbH & Co. KGaA
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