Investigation into the switching transient of SiC MOSFET using voltage/current source gate driver

Wu, H; Wang, X; Ortiz-Gonzalez, J; Alatise, O; Pickert, V

doi:10.1049/icp.2021.1290

Investigation into the switching transient of SiC MOSFET using voltage/current source gate driver

Lookup NU author(s): Dr Haimeng Wu, Dr Xiang Wang, Layi Alatise, Professor Volker Pickert

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Abstract

© PEMD 2020. All right reserved. This paper investigates the influence of current-source and voltage-source gate driver on the switching transient performance of trench and planner SiC MOSFETs. Devices have been tested at different temperatures and switching speeds using the designed double-pulse testing system. To evaluate the performance of different gate driving approaches, the dynamic transients of SiC MOSFETs are analysed and discussed using different values of gate resistors and controlled gate currents. The results show that the current-source gate driver has a higher switching speed than voltage-source counterparts at the same transient changing rate of drain-source voltage, resulting in lower operating losses for the power devices. Therefore, current-source gate drivers can facilitate power converters to achieve higher efficiency compared with voltage-source gate drivers.