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Lookup NU author(s): Dr Nebojsa Jankovic Professor, Dr Alton Horsfall
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In this paper we investigated the self-heating effects in SiGe heterojunction bipolar transistors (HBTs) fabricated on SiGe alloy virtual substrate. Using a two-dimensional process and device numerical simulation, we have found that self-heating effects and local temperature increase due to the internal power dissipation are substantially more pronounced in virtual substrate HBTs in comparison with identical HBT devices on silicon substrate. (12 References).
Author(s): Horsfall AB; Jankovic ND
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services
Year of Conference: 2003
Pages: 573-576
Publisher: IEEE
URL: http://dx.doi.org/10.1109/TELSKS.2003.1246291
DOI: 10.1109/TELSKS.2003.1246291
Notes: 2. Piscataway, NJ, USA.
Library holdings: Search Newcastle University Library for this item
ISBN: 0780379632
