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Lookup NU author(s): Dr Konstantin VasilevskiyORCiD
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A process is disclosed for producing pn junctions and p-i-n junctions from group III nitride compound semiconductor materials. The process comprises growing of pn junctions and p-i-n junctions by hydride vapor phase epitaxy employing hydride of nitrogen (ammonia, hydrozine) as a source of nitrogen and halides of group III metal as a source of metal. Mg is used as acceptor impurity to form p-type III-V nitride layers. The preferred sources for Ga and Al are Ga and Al metals, respectively. The process is carried out in the temperature range from 900 to 1200.degree. C.
Inventor(s): Vassilevski K; Nikolaev A; Melnik Y; Dmitriev V
Publication type: Patent
Publication status: Published
Year: 2001
Assignee: Technology and Devices International, Inc.
Source Publication Date: 17-04-2001
