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Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD

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Inventor(s): Vassilevski K; Zekentes K

Publication type: Patent

Publication status: Published

Year: 2002

Print publication date: 06/04/2002

Country: Canada

Source Publication Date: April 6, 2002

URL: http://ip.com/patapp/CA2322595A1

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