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Dislocation-induced electronic states and point-defect atmospheres evidenced by electron energy loss imaging

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Electronic band gap states connected with individual dislocations in diamond and GaN are revealed, using highly spatially resolved electron energy loss (EEL) spectrum mapping. Comparison with calculations of low EEL spectra from first-principle methods allows the identification of the joint density of states of different dislocation core types. Also presented is evidence for instances where point defects/impurities have accumulated in the strain field or segregated to the core of dislocations.


Publication metadata

Author(s): Bangert U, Harvey AJ, Jones R, Fall CJ, Blumenau AT, Briddon PR, Schreck M, Hörmann F

Publication type: Article

Publication status: Published

Journal: New Journal of Physics

Year: 2004

Volume: 6

Issue: 184

Pages: 1-10

Date deposited: 22/01/2008

ISSN (print): 1367-2630

Publisher: Institute of Physics

URL: http://dx.doi.org/10.1088/1367-2630/6/1/184

DOI: 10.1088/1367-2630/6/1/184


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