Toggle Main Menu Toggle Search

ePrints

The twelve-line 1.682 eV luminescence center in diamond and the vacancy-silicon complex

Lookup NU author(s): Dr Jon Goss, Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

Ab initio cluster methods are used to investigate vacancy-impurity complexes in diamond. We assign the 1.682 eV, twelve-line optical band to a vacancy-Si complex which has a very unusual, possibly unique structure with a Si atom at the center of a split vacancy. The method also successfully accounts for the 1.945, 2.156, and 2.985 eV optical transitions in trigonal vacancy-N defects and estimates of radiative lifetimes are given.


Publication metadata

Author(s): Goss JP, Jones R, Breuer SJ, Briddon PR, Oberg S

Publication type: Article

Publication status: Published

Journal: Physical Review Letters

Year: 1996

Volume: 77

Issue: 14

Pages: 3041-3044

Print publication date: 01/01/1996

ISSN (print): 0031-9007

ISSN (electronic): 1079-7114

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevLett.77.3041

DOI: 10.1103/PhysRevLett.77.3041


Altmetrics

Altmetrics provided by Altmetric


Actions

    Link to this publication


Share