Lookup NU author(s): Professor Steve Bull
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The vacancy profile in Czochralski silicon (111) implanted with 50 keV nitrogen ions has been determined using positron annihilation spectroscopy. The nitrogen distribution has been measured using secondary ion mass spectroscopy. The fitted defect distribution compares well with the results of TRIM calculations.
Author(s): Van Der Werf DP, Saleh AS, Towner A, Nathwani M, Taylor J, Rice-Evans PC, Bull SJ
Publication type: Article
Publication status: Published
Journal: Materials Science Forum
Print publication date: 01/01/1997
ISSN (print): 0255-5476
ISSN (electronic): 1422-6375
Publisher: Trans Tech Publications