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Lookup NU author(s): Professor Patrick Briddon
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We present the results of first principle calculations on the behaviour of molecular hydrogen within crystalline silicon, both as an isolated species, and within defects in the material. These results are compared with recent experimental infra-red and Raman data obtained for silicon treated by either hydrogen plasma or soaked in hydrogen gas. The effect of Fermi-level position on the diffusion barrier of molecular hydrogen within silicon is also discussed.
Author(s): Briddon PR; Hourahine B; Jones R; Oberg S
Publication type: Article
Publication status: Published
Journal: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Year: 1999
Volume: 58
Issue: 1
Pages: 24-25
Print publication date: 12/02/1999
ISSN (print): 1873-4944
ISSN (electronic):
Publisher: Elsevier
URL: http://dx.doi.org/10.1016/S0921-5107(98)00268-2
DOI: 10.1016/S0921-5107(98)00268-2
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