Toggle Main Menu Toggle Search

ePrints

Molecular hydrogen traps within silicon

Lookup NU author(s): Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

We present the results of first principle calculations on the behaviour of molecular hydrogen within crystalline silicon, both as an isolated species, and within defects in the material. These results are compared with recent experimental infra-red and Raman data obtained for silicon treated by either hydrogen plasma or soaked in hydrogen gas. The effect of Fermi-level position on the diffusion barrier of molecular hydrogen within silicon is also discussed.


Publication metadata

Author(s): Briddon PR; Hourahine B; Jones R; Oberg S

Publication type: Article

Publication status: Published

Journal: Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Year: 1999

Volume: 58

Issue: 1

Pages: 24-25

Print publication date: 12/02/1999

ISSN (print): 1873-4944

ISSN (electronic):

Publisher: Elsevier

URL: http://dx.doi.org/10.1016/S0921-5107(98)00268-2

DOI: 10.1016/S0921-5107(98)00268-2


Altmetrics

Altmetrics provided by Altmetric


Actions

    Link to this publication


Share