Toggle Main Menu Toggle Search

ePrints

Interstitial aggregates and a new model for the I1/W optical centre in silicon

Lookup NU author(s): Dr Jon Goss, Angharad Jones, Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

The properties of di-interstitial (I2), tri-interstitial (I3) and tetra-interstitial (I4) structures in silicon were studied by employing first principles local-density-functional (LDF) theory. A tri-interstitial defect can account for many of the fundamental properties of the I1/W-optical center which is observed in irradiated, annealed silicon. Energy comparisons between di-interstitial defects reveal four low-energy structures within 0.5 eV of each other.


Publication metadata

Author(s): Coomer BJ, Goss JP, Jones R, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physica B: Condensed Matter

Year: 1999

Volume: 273-274

Pages: 505-508

Print publication date: 15/12/1999

ISSN (print): 0921-4526

ISSN (electronic): 1873-2135

Publisher: Elsevier

URL: http://dx.doi.org/10.1016/S0921-4526(99)00538-4

DOI: 10.1016/S0921-4526(99)00538-4


Altmetrics

Altmetrics provided by Altmetric


Actions

    Link to this publication


Share