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Lookup NU author(s): Dr Jon Goss,
Professor Patrick Briddon
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The properties of di-interstitial (I2), tri-interstitial (I3) and tetra-interstitial (I4) structures in silicon were studied by employing first principles local-density-functional (LDF) theory. A tri-interstitial defect can account for many of the fundamental properties of the I1/W-optical center which is observed in irradiated, annealed silicon. Energy comparisons between di-interstitial defects reveal four low-energy structures within 0.5 eV of each other.
Author(s): Coomer BJ, Goss JP, Jones R, Oberg S, Briddon PR
Publication type: Article
Publication status: Published
Journal: Physica B: Condensed Matter
Print publication date: 15/12/1999
ISSN (print): 0921-4526
ISSN (electronic): 1873-2135
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